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ZXGD3110N8 document number ds 37336 rev. 1 - 2 1 of 11 www.diodes.com december 2015 ? diodes incorporated ZXGD3110N8 synchronous mosfet controller in so - 8 description the zxgd3110 n8 is intended to drive a mosfet configured as an ideal diode replacement. the device is comprised of a high voltage detector stage and gate driver. the detector monito rs the voltage between the drain and the source of the mosfet and if this voltage is less than the turn on threshold voltage of the controller a positive voltage is applied to the mosfets gate p in. as the load current de cays to zero and the voltage betwee n the drain and source of the mosfet increases beyond the turn - off threshold value mosfet is rapidly turned off. intelligent features of this ic are the minimum off - time (t off ) and minimum on - time ( t on ), these features blank et the noise gene rated during the turn - on and turn - off instances of the power fet . also light load detection (lld) for improved efficiency at light and no load, where synchronous rectification is no more beneficia l. other features include u ndervolta ge lock o ut (uvlo), sync feature for ccm operation and low turn - off threshold voltage for improved efficiency. applications flyback converters in: ? power adaptors ? auxiliary power supplies ? poe power devices resonant converters in : ? high power adapto rs ? 85+/90+ c ompliant atx and server power supplies features ? frequency of o peration up to 500 khz ? suitable for discontinuous conduction mode (dcm), continuous conduction mode (ccm) and critical (crcm) conduction mode ? minimum o n - time and off - time to re duce t urn - on /off oscillations ? intelligent light load detection and sleep mode ? tu rn - off propagation delay time 3 0 n s ? drain voltage rating of 200v ? recommended operating voltage from 4.5v up to 12 v ? source and sink current of 2 a and 4a r espectively ? low component count ? totally lead - free & fully rohs c ompliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: so - 8 ? case m aterial: m olded p lastic . green m olding c ompound . ul flammability classification rating 9 4v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin plated leads , s olderable per mil - std - 202, method 208 ? weight: 0.07 4 grams ( a pproximate) ordering information (note 4 ) product marking reel s ize (inches) tape w idth (mm) quantity per r eel zxgd3110 n8tc zxgd3110 13 12 2 , 500 notes: 1. no purposely added lead. fully eu directive 2002/ 95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen and antimony free,"green" and lead - free. 3. halogen and antimon y free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com/products/packages.html . top view pin - out gnd sync v cc vs v d pgate t on gate so - 8 top v iew
ZXGD3110N8 document number ds 37336 rev. 1 - 2 2 of 11 www.diodes.com december 2015 ? diodes incorporated ZXGD3110N8 marking information functional block diagram zxgd = product typ e marking code, line 1 3110 = product type marking code, line 2 yy = year (ex: 1 5 = 201 5 ) ww = week (01 - 53) zxgd 3110 yy ww
ZXGD3110N8 document number ds 37336 rev. 1 - 2 3 of 11 www.diodes.com december 2015 ? diodes incorporated ZXGD3110N8 pin description s pin number pin name function 1 v cc power s upply pin v cc supplies all the internal circuitry of the device. a dc supply is required to be connected to this pin . a 10 f or larger capacitor must be connected between this pin and gnd p in as close as possible. the device will not function until the v cc has risen above the uvlo threshold. the device can safely be turned off b y bringing v cc below the uvlo threshold (minus the uvlo threshold hysteresis). if v cc drops below the uvlo threshold (minus uvlo threshold hysteresis), the mosfet is turned off and the t off / on p in is internally connected to gnd. 2 t on minimum on - t ime minimum on - time setting pin. connect this pin to ground via r ton resistor . 3 v s source voltage connect this pin to the source of the synchronous mosfet . 4 v d drain voltage th is pin needs to be connected as closely as possible to the transfo rmer used in the application, to minimize the effects of parasitic inductance on the performance of the device. the device requires that v d has a voltage greater than 1.5v and that the t off timer has expired before the mosfet is able to be activated. once these conditions are met and the voltage sensed on the v d p in is 150mv lower than the v s p in, the g ate output to the sync mosfet will go high and the t on ( minimum on - time ) period is started. the mosfet will remain on for at least the length of the min imum on - time. after the t on period, the mosfet will remain on until the v d to v s voltage has reached to the v thoff threshold, at which point the g ate output will go low. if the v thoff threshold is reached before the t on period has expired, the device w ill enter the light load mode. under this mode, the mosfet will not be turned on the next switching cycle. the d evice will come out of light load, once the on - time of the synchronous mosfet exceeds the set minimum on - time. 5 pgate prote ction mosfet gate a 100nf capacitor should be connected between this pin and gnd. 6 gate gate connect gate to the gate of the controlled mosfet through a small series resistor using short pc board tracks to achieve optimal switching performance. the g ate output can source > 2a peak source current while turning on the sync mosfet and can sink > 4a peak current while turning on the s y nc mosfet. 7 sync gate turn - off synchronization if a falling e dge is sensed on this pin, the g ate output is pulled low , ir respective of the sensed drain to source voltage or the state of the t on timer. this characteristic allows the device to be easily used in a continuous conduction mode (ccm) system. the sync p in needs to be connected to a suitable control signal on the pri mary side of the convertor, using a high voltage isolation cap, transformer or other suitable means. 8 gnd ground this is the reference potential for all internal comparators and thresholds. a 10 f decoupling capacitor is required to place as close as possible between v cc and gnd p ins.
ZXGD3110N8 document number ds 37336 rev. 1 - 2 4 of 11 www.diodes.com december 2015 ? diodes incorporated ZXGD3110N8 absolute maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit supply voltage, relative to gnd v c c - 0.3 to 15 v drain pin voltage v d - 1 to + 200 v gate output voltage v g 12 v minimum off - time (t off ) pin voltage sync - 0.3 to 6 v minimum on - time ( t on ) pin voltage v ton - 0.3 to 6 v gate driver peak source current i source 5 a gate driver peak sink current i sink 5 a i nput voltage range v s v s - 1 to 1 v thermal cha racteristics characteristic symbol value unit power dissipation linear derating factor (note 5 ) p d 490 3.92 m w mw/ c (note 6 ) 655 5.24 (note 7 ) 720 5.76 (note 8 ) 785 6.28 thermal resistance, junctio n to ambient (note 5 ) r ja 255 c /w (note 6 ) 191 (note 7 ) 173 (note 8 ) 159 thermal resistance, junction to lead (note 9 ) r jl 55 c /w ? jc 45 c /w maximum junction temperature t j +150 c storage temperature range t stg - 65 to + 150 esd ratings (note 1 1 ) characteristic symbol value unit jedec class electrostatic discharge C C notes: 5 . for a device surface mounted on minimum recommended pad layout fr4 pcb with high coverage of single sided 1oz copper, in still air conditions ; the device is measured when operatin g in a steady - state condition. 6 . same as n ote ( 5 ), except p in 1 (v cc ) and p in 8 (gnd) are both connected to separate 5 mm x 5 mm 1oz copper heatsink s . 7 . same as n ote ( 6 ), except both heatsink s are 10mm x 10mm. 8 . same as n ote ( 6 ), except both heatsink s are 15mm x 15mm. 9 . thermal resis tance from junction to solder - point at the end of each lead on p in 1 (v cc ) and p in 8 ( gnd ) . 10. thermal resistance from junction to top of the case. 1 1 . refer to jedec specification jesd22 - a114 and jesd22 - a115.
ZXGD3110N8 document number ds 37336 rev. 1 - 2 5 of 11 www.diodes.com december 2015 ? diodes incorporated ZXGD3110N8 recommended operating conditions (@ t a = +25c, unless otherwise specified.) symbol parameter min max unit v cc supply v oltage r ange 4.5 12 v v ds voltage c ross d rain and s ource - 1 20 0 f s w switching frequency 20 600 khz t j operating junction t emperature r ange - 40 + 125 c r ton t on resi stor value 8.25 100 k ? c vcc v cc bypass capacitor 10 tw sync sync pulse width 20 thermal derating curve 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 15mm x 15mm 5mm x 5mm minimum layout derating curve junction temperature (c) max power dissipation (w) 10mm x 10mm
ZXGD3110N8 document number ds 37336 rev. 1 - 2 6 of 11 www.diodes.com december 2015 ? diodes incorporated ZXGD3110N8 electrical characteristics (@ t a = +25c, unless otherwise specified.) symbol parameter condition s min typ max unit v avdd i nternal regulator output v cc = 5.5v 4.5 v v cc = 12 v 4.7 v icc start supply current ( u nder v oltage) v cc = 2.6v 160 220 a icc on supply current ( e nabled) v cc = 5.5v, f sw = 100 k hz c gate = 0pf 1.5 1.8 ma v cc = 12v, f sw = 100 k hz c gate = 0pf 1.8 2. 2 v cc = 5.5v, f sw = 100 k hz c gate = 3 , 300pf 3.2 4 v cc = 12v, f sw = 100 k hz c gate = 3 , 300pf 5 7 under v oltage lockout (uvlo) uvlo th v cc undervoltage lockout threshold rising 2.8 3.0 3.2 0 v uvlo hys v cc undervoltage lockout t hreshold hysteresis 200 mv mosfet voltage sensing v tharm gate r e - a rming t hreshold v d to gnd, rising - 1.3 - 1.5 - 1.7 v v thon gate t urn - on t hreshold (v d - v s ) falling , v s = 0v - 220 - 150 - 80 mv v thofflv gate t urn - off t hreshold (v d - v s ) rising , v s = 0v, v cc < 4. 3 v - 30 - 20 - 10 mv v thoffhv gate t urn - o ff t hreshold (v d - v s ) rising , v s = 0v, v cc > 4. 3 v - 10 - 4 - 1 mv t d ( on ) gate turn - on propagation delay from v t h on to gate > 1v 30 5 2 n s t d ( off ) gate turn - off propagation delay from v thoff to gate < 4v 30 6 2 n s minimum on - time t on - lr minimum on - time low resistance r ton = 8.25 k ? 0.26 0.34 0.42 s t on - hr minimum on - time high resistance r ton = 100 k ? 2. 2 3 3. 8 s synchroni zation v thsync sync f alling t hreshold gate output from high to low v avdd - 2.4 v avdd - 2.0 v avdd - 1.6 v t sdly sync p ropagation d elay ( n ote 8) sync f alling to gate falling 10%, 4.5v < v cc < 5.5v 40 n s r sync sync pull up resistance ( n ote 8) internal resistance from sync to v cc , 4.5v < v cc < 5.5v 2.0 k ?
ZXGD3110N8 document number ds 37336 rev. 1 - 2 7 of 11 www.diodes.com december 2015 ? diodes incorporated ZXGD3110N8 electrical characteristics (continued) (@ t a = +25c, unless otherwise specified.) gate driver r gup gate pull - up resistance enabled i gate = - 100ma 2.3 ? r gdn gate pu l l - down resistance enabled i gate = 100ma 1.1 i source peak gate source current c gate = 22nf sink peak gate sink current c gate = 22nf ohg gate output high voltage v cc = 5v 4. 7 v v cc = 12 v 9 v olg gate output low voltage v cc = 5 v 0. 3 t f gate gate fall time 4v to 1v, c gate = 3 , 300p f , v cc = 5v 14 4 2 n s 9v to 1v, c gate = 3 , 300p f , v cc = 12v 20 4 2 t r gate gate rise time 1v to 4v, c gate = 3 , 3 00p f , v cc = 5v 16 4 2 1v to 9v, c gate = 3 , 300p f , v cc = 12v 2 0 4 2 exception handling t over over t emperature + 150 c t re c over temperature to r ecover from over t emperature e xception + 125 c typical application circuit + v o u t p w m c o n t r o l l e r c c m / c r c m / d c m - v o u t z x g d 3 1 1 0 d r a i n g a t e s o u r c e r t o n s y n c v c c r t o n g d s r s y n c c 3 c 1 c 2 c 4 s n u b b e r t r a n s f o r m e r s y n c h r o n o u s m o s f e t p g a t e c p g a t e g n d z x t r 2 0 1 2 i n g n d o u t c 3 l e s s t h a n 1 2 v r a i l s c a n b e d i r e c t l y c o n n e c t e d t o t h e v c c . f o r m o r e t h a n 1 2 v o p e r a t i o n , a r e g u l a t o r a r r a n g e m e n t i s s u g g e s t e d i n t h e f i g u r e . c p g a t e o f 0 . 1 f m u s t b e c o n n e c t e d c 3 o f 1 f m u s t b e c o n n e c t e d c 1 o f > 1 0 f m u s t b e c o n n e c t e d a s c l o s e a s p o s s i b l e t o v c c a n d g r o u n d w i t h m i n i m u m t r a c k l e n g t h
ZXGD3110N8 document number ds 37336 rev. 1 - 2 8 of 11 www.diodes.com december 2015 ? diodes incorporated ZXGD3110N8 typical performance characteristics figure 1 figure 2 figure 3 figure 4 figure 5 figure 6
ZXGD3110N8 document number ds 37336 rev. 1 - 2 9 of 11 www.diodes.com december 2015 ? diodes incorporated ZXGD3110N8 typical performance characteristics (co ntinued) figure 7 figure 8 figure 9 figure 10 figure 11
ZXGD3110N8 document number ds 37336 rev. 1 - 2 10 of 11 www.diodes.com december 2015 ? diodes incorporated ZXGD3110N8 package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf f or the latest version. suggested pad layou t please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. note: for high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and pcb tracking. so - 8 dim min max a a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h l 0.62 0.82 ? ? all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 so - 8 so - 8 x c1 c2 y gauge plane seating plane detail a detail a e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0 . 2 5 4
ZXGD3110N8 document number ds 37336 rev. 1 - 2 11 of 11 www.diodes.com december 2015 ? diodes incorporated ZXGD3110N8 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, im provements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; nei ther does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to h old diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased throu gh unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages , expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international o r foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. on ly the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support de vices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonab ly expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulat ory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated . further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com

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